2002. 5. 8
1/3
SEMICONDUCTOR
TECHNICAL DATA
KRX105U
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in USV.
(Ultra Super mini type with 5 leads.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM
MILLIMETERS
A
B
D
G
USV
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
A
H
T
5
4
C
C
A
1
1.3 0.1
A1
+
_
+
_
+
_
+
_
+
_
1. Q COMMON (EMITTER)
2. Q IN (BASE)
3. Q COMMON (EMITTER)
4. Q OUT (COLLECTOR)
5. Q OUT (COLLECTOR)
1
1
Q IN (BASE)
2
1
2
2
EQUIVALENT CIRCUIT
Q
1
MAXIMUM RATING (Ta=25)
R1
C
E
B
R1
C
E
B
Q
1
R1=4.7K
(Q , Q COMMON)
Q
2
2
1
1
Q1
2
3
5
4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
BE
Type Name
1
2
3
4
5
Q
2
MAXIMUM RATING (Ta=25)
Q
1
, Q
2
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Power Dissipation
P
C
*
200
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55150
Marking
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
2002. 5. 8
2/3
KRX105U
Revision No :2
Q
1
ELECTRICAL CHARACTERISTICS (Ta=25)
Note : * Characteristic of Transistor Only.
Note : * Characteristic of Transistor Only.
Q
2
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
100
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
100
DC Current Gain
h
FE
V
CE
=5V, I
C
=1
120
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10, I
B
=0.5
-
0.1
0.3
V
Transition Frequency
f
T
*
V
CE
=10V, I
C
=5
-
250
-
Input Resistor
R
I
-
4.7
-
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-100
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-100
DC Current Gain
h
FE
V
CE
=-5V, I
C
=-1
120
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-10, I
B
=-0.5
-
-0.1
-0.3
V
Transition Frequency
f
T
*
V
CE
=-10V, I
C
=-5
-
250
-
Input Resistor
R
I
-
4.7
-
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